CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

Yadav, SachinSachinYadavCardinael, PieterPieterCardinaelZhao, MingMingZhaoVondkar Kodandarama, KomalKomalVondkar KodandaramaPeralagu, UthayasankaranUthayasankaranPeralaguAlian, AlirezaAlirezaAlianKhaled, AhmadAhmadKhaledMakovejev, SergejSergejMakovejevEkoga, EnriqueEnriqueEkogaLederer, DimitriDimitriLedererRaskin, Jean-PierreJean-PierreRaskinParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2023-01-192022-09-192023-01-1920212381-3555WOS:000851575300036https://imec-publications.be/handle/20.500.12860/40461CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearitiesProceedings paper10.1109/ICICDT51558.2021.9626530978-1-6654-4998-4WOS:000851575300036DEGREES-CPERFORMANCESILICON