Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivation

Kaczer, BenBenKaczerDe Jaeger, BriceBriceDe JaegerNicholas, GarethGarethNicholasMartens, KoenKoenMartensDegraeve, RobinRobinDegraeveHoussa, MichelMichelHoussaPourtois, GeoffreyGeoffreyPourtoisLeys, FrederikFrederikLeysMeuris, MarcMarcMeurisGroeseneken, GuidoGuidoGroeseneken2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12374Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivationJournal article