Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes

Vinicius de Oliveira, AlbertoAlbertoVinicius de OliveiraSimoen, EddyEddySimoenGhedini der Agopian, PaulaPaulaGhedini der AgopianMartino, Joao AntonioJoao AntonioMartinoWitters, LiesbethLiesbethWittersCollaert, NadineNadineCollaertThean, AaronAaronTheanClaeys, CorCorClaeys2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27552Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processesProceedings paperhttps://ieeexplore.ieee.org/document/7804384