Location and hardness of the oxide breakdown in short channel n- and p-MOSFETs

Crupi, FeliceFeliceCrupiKaczer, BenBenKaczerDegraeve, RobinRobinDegraeveDe Keersgieter, AnAnDe KeersgieterGroeseneken, GuidoGuidoGroeseneken2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6159Location and hardness of the oxide breakdown in short channel n- and p-MOSFETsProceedings paper