Low-temperature homoepitaxy of silicon by electron cyclotron resonance CVD

Conrad, E.E.ConradElstner, L.L.ElstnerFuhs, W.W.FuhsHenrion, W.W.HenrionMüller, P.P.MüllerPoortmans, JefJefPoortmansSelle, B.B.SelleZeimer, U.U.Zeimer2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1781Low-temperature homoepitaxy of silicon by electron cyclotron resonance CVDProceedings paper