Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si1-xGex source/drain junctions

Bargallo Gonzalez, MireiaMireiaBargallo GonzalezSimoen, EddyEddySimoenVissouvanadin, B.B.VissouvanadinVerheyen, PeterPeterVerheyenLoo, RogerRogerLooClaeys, CorCorClaeys2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13345Influence of the strain-relaxation induced defect creation on the leakage current of embedded Si1-xGex source/drain junctionsOral presentation