RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si

ElKashlan, RanaRanaElKashlanKhaled, AhmadAhmadKhaledRodriguez, RaulRaulRodriguezSibaja-Hernandez, ArturoArturoSibaja-HernandezPeralagu, UthayasankaranUthayasankaranPeralaguAlian, AliRezaAliRezaAlianCollaert, NadineNadineCollaertWambacq, PietPietWambacqParvais, BertrandBertrandParvais2024-01-112023-04-232024-01-1120231759-0787WOS:000953685900001https://imec-publications.be/handle/20.500.12860/41482RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on SiJournal article10.1017/S1759078722001428WOS:000953685900001DISTORTIONAM