Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe

Zhang, JianJianZhangYu, HaoHaoYuSchaekers, MarcMarcSchaekersHoriguchi, NaotoNaotoHoriguchiWang, LinlinLinlinWangJiang, YulongYulongJiang2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27656Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGeProceedings paperhttp://ieeexplore.ieee.org/document/7998968/