Oxide traps in MOS transistors: semi-automatic extraction of trap parameters from time dependent defect spectroscopy

Wagner, Paul-JurgenPaul-JurgenWagnerGrasser, TiborTiborGrasserReisinger, HansHansReisingerKaczer, BenBenKaczer2021-10-192021-10-192010-07https://imec-publications.be/handle/20.500.12860/18322Oxide traps in MOS transistors: semi-automatic extraction of trap parameters from time dependent defect spectroscopyProceedings paperhttp://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5532233