First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

Minari, HidekiHidekiMinariYoshida, ShinichiShinichiYoshidaSawada, KenKenSawadaNakazawa, MasashiMasashiNakazawaCaymax, MattyMattyCaymaxMerckling, ClementClementMercklingWaldron, NiamhNiamhWaldronGuo, WeimingWeimingGuoJiang, SijiaSijiaJiangCollaert, NadineNadineCollaertSimoen, EddyEddySimoenLin, DennisDennisLinPourtois, GeoffreyGeoffreyPourtois2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24256First-principles studies of the defect formation in III-V FETs grown by aspect ratio trappingMeeting abstracthttp://ma.ecsdl.org/content/MA2014-02/31/1646.abstract