Detection, binning, and analysis of defects in a GaN-on-Si process for high brightness light emitting diodes

Halder, SandipSandipHalderMiller, AndyAndyMillerOsman, HarisHarisOsmanDutta, BarundebBarundebDuttaMani, AntonioAntonioManiJones, ChrisChrisJonesMcCance, SydSydMcCanceBurkeen, FrankFrankBurkeen2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20771Detection, binning, and analysis of defects in a GaN-on-Si process for high brightness light emitting diodesProceedings paper