Characterisation of 2% mismatched InGaAs layers, grown on different bufferlayers and at different growth temperatures

D'Hondt, MarkMarkD'HondtMoerman, IngridIngridMoermanDemeester, PietPietDemeester2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1210Characterisation of 2% mismatched InGaAs layers, grown on different bufferlayers and at different growth temperaturesOral presentation