Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostructures on Si for advanced CMOS devices

Merckling, ClementClementMercklingWaldron, NiamhNiamhWaldronJiang, SijiaSijiaJiangGuo, WeimingWeimingGuoRyan, PaulPaulRyanCollaert, NadineNadineCollaertCaymax, MattyMattyCaymaxBarla, KathyKathyBarlaHeyns, MarcMarcHeynsThean, AaronAaronTheanVandervorst, WilfriedWilfriedVandervorst2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24245Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostructures on Si for advanced CMOS devicesProceedings paperhttp://ecst.ecsdl.org/content/61/2/107.abstract?sid=c040df6b-cac2-42fd-a923-ce62ea40805b