Growth of high Ge content SiGe on (110) oriented Si wafers

Hikavyy, AndriyAndriyHikavyyVanherle, WendyWendyVanherleVincent, BenjaminBenjaminVincentDekoster, JohanJohanDekosterBender, HugoHugoBenderMoussa, AlainAlainMoussaWitters, LiesbethLiesbethWittersHoffmann, Thomas Y.Thomas Y.HoffmannLoo, RogerRogerLoo2021-10-202021-10-2020120040-6090https://imec-publications.be/handle/20.500.12860/20813Growth of high Ge content SiGe on (110) oriented Si wafersJournal article