Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrations

Liang, ZhaoZhaoLiangClima, SergiuSergiuClimaMagyari-Köpe, BlankaBlankaMagyari-KöpeJurczak, GosiaGosiaJurczakNishi, YoshioYoshioNishi2021-10-222021-10-2220150003-6951https://imec-publications.be/handle/20.500.12860/25560Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrationsJournal articlehttp://scitation.aip.org/content/aip/journal/apl/107/1/10.1063/1.4926337