Advantages of different source/drain engineering on scaled UTBOX FD SOI nMOSFETs at high temperature operation

Nicoletti, TalithaTalithaNicolettiDos Santos, SaraSaraDos SantosMartino, Joao A.Joao A.MartinoAoulaiche, MarcMarcAoulaicheVeloso, AnabelaAnabelaVelosoJurczak, GosiaGosiaJurczakSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-222021-10-2220140038-1101https://imec-publications.be/handle/20.500.12860/24322Advantages of different source/drain engineering on scaled UTBOX FD SOI nMOSFETs at high temperature operationJournal articlehttp://www.sciencedirect.com/science/article/pii/S0038110113002967