Electrical characterization of Si capped Hf)2/metal gate Ge-pFETs: physical insight into critical parameters

Mitard, JeromeJeromeMitardVincent, BenjaminBenjaminVincentDe Jaeger, BriceBriceDe JaegerMartens, KoenKoenMartensKrom, RaymondRaymondKromLoo, RogerRogerLooEneman, GeertGeertEnemanDe Meyer, KristinKristinDe MeyerMeuris, MarcMarcMeurisHeyns, MarcMarcHeynsVandervorst, WilfriedWilfriedVandervorstCaymax, MattyMattyCaymaxHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17642Electrical characterization of Si capped Hf)2/metal gate Ge-pFETs: physical insight into critical parametersMeeting abstract