High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALE

Kundu, ShreyaShreyaKunduDecoster, StefanStefanDecosterBezard, PhilippePhilippeBezardNalin Mehta, AnkitAnkitNalin MehtaDekkers, HaroldHaroldDekkersLazzarino, FredericFredericLazzarino2022-08-262022-08-052022-08-192022-08-262022-07-191944-8244WOS:000831516200001https://imec-publications.be/handle/20.500.12860/40204High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALEJournal article10.1021/acsami.2c07514WOS:000831516200001Materials scienceDRY-ETCHING CHARACTERISTICSFILMAtomic layer etchingplasma pulsingchemical etchingInGaZnOMEDLINE:35850517