Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

Porret, ClémentClémentPorretVohra, AnuragAnuragVohraHikavyy, AndriyAndriyHikavyyRosseel, ErikErikRosseelHuang, Yan-HuaYan-HuaHuangTirrito, MatteoMatteoTirritoKohen, DavidDavidKohenMargetis, JoeJoeMargetisTolle, JohnJohnTollePetersen Barbosa Lima, LucasLucasPetersen Barbosa LimaKhazaka, RamiRamiKhazakaLanger, RobertRobertLangerLoo, RogerRogerLoo2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33820Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integrationOral presentation