Heterogeneous nano-electronic devices enabled by monolithic integration of IIIV, Ge, and Si to expand future CMOS functionality

Thean, AaronAaronTheanCollaert, NadineNadineCollaertWaldron, NiamhNiamhWaldronMerckling, ClementClementMercklingWitters, LiesbethLiesbethWittersLoo, RogerRogerLooMitard, JeromeJeromeMitardRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandoorenVerhulst, AnneAnneVerhulstVeloso, AnabelaAnabelaVelosoPourghaderi, Mohammad AliMohammad AliPourghaderiEneman, GeertGeertEnemanYakimets, DmitryDmitryYakimetsHuynh Bao, TrongTrongHuynh BaoGarcia Bardon, MarieMarieGarcia BardonRyckaert, JulienJulienRyckaertDehan, MorinMorinDehanWambacq, PietPietWambacqCaymax, MattyMattyCaymax2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24612Heterogeneous nano-electronic devices enabled by monolithic integration of IIIV, Ge, and Si to expand future CMOS functionalityProceedings paperhttp://www.nsti.org/procs/Nanotech2014v3/1/T8.135