Interface trap density metrology of state-of-the-art undoped Si n-FinFETs

Tettamanzi, GiuseppeGiuseppeTettamanziPaul, AbhijeetAbhijeetPaulLee, SunheeSunheeLeeMehrotra, S.R.S.R.MehrotraCollaert, NadineNadineCollaertBiesemans, SergeSergeBiesemansKlimeck, G.G.KlimeckRogge, SvenSvenRogge2021-10-192021-10-1920110741-3106https://imec-publications.be/handle/20.500.12860/19877Interface trap density metrology of state-of-the-art undoped Si n-FinFETsJournal article