Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices

Agaiby, Rouzet M. B.Rouzet M. B.AgaibyOlsen, SarahSarahOlsenEneman, GeertGeertEnemanSimoen, EddyEddySimoenAugendre, EmmanuelEmmanuelAugendreO'Neill, Anthony G.Anthony G.O'Neill2021-10-182021-10-1820100741-3106https://imec-publications.be/handle/20.500.12860/16631Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devicesJournal article