Removal of Si-O, Si-C and Si-F by hydrogen bake after reactive ion etching on the silicon surface

Kim, Young-ChangYoung-ChangKimCaymax, MattyMattyCaymaxBender, HugoHugoBenderVanhaelemeersch, SergeSergeVanhaelemeersch2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2665Removal of Si-O, Si-C and Si-F by hydrogen bake after reactive ion etching on the silicon surfaceOral presentation