Selective growth of InGaAs on Si(001) by MOVPE: study of strain relaxation, facet formation and their relevance

Guo, WeimingWeimingGuoWaldron, NiamhNiamhWaldronMols, YvesYvesMolsVeloso, AnabelaAnabelaVelosoZhou, DaisyDaisyZhouCollaert, NadineNadineCollaertThean, AaronAaronTheanLanger, RobertRobertLangerBarla, KathyKathyBarlaKunert, BernardetteBernardetteKunertDate, LucienLucienDateBao, XinyuXinyuBaoCarlson, DavidDavidCarlsonSanchez, ErrolErrolSanchez2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26674Selective growth of InGaAs on Si(001) by MOVPE: study of strain relaxation, facet formation and their relevanceMeeting abstract