Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

Fahle, DirkDirkFahleZhao, MingMingZhaoGeens, KarenKarenGeensLi, XiangdongXiangdongLiWellekens, DirkDirkWellekensMagnani, AlessandroAlessandroMagnaniAmirifar, NooshinNooshinAmirifarBakeroot, BenoitBenoitBakerootYou, ShuzhenShuzhenYouOdnoblyudov, VladimirVladimirOdnoblyudovAktas, OzgurOzgurAktasBasceri, CemCemBasceriMarcon, DenisDenisMarconGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutereHahn, HerwigHerwigHahnHeuken, MichaelMichaelHeuken2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/32946Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 VMeeting abstract