Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices

Delhougne, RomainRomainDelhougneEneman, GeertGeertEnemanCaymax, MattyMattyCaymaxLoo, RogerRogerLooMeunier-Beillard, PhilippePhilippeMeunier-BeillardVerheyen, PeterPeterVerheyenVandervorst, WilfriedWilfriedVandervorstDe Meyer, KristinKristinDe MeyerHeyns, MarcMarcHeyns2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8830Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devicesJournal article