Strain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process

Verheyen, PeterPeterVerheyenMachkaoutsan, VladimirVladimirMachkaoutsanBauer, MatthiasMatthiasBauerWeeks, DoranDoranWeeksKerner, ChristophChristophKernerBender, HugoHugoBenderShamiryan, DenisDenisShamiryanLoo, RogerRogerLooHoffmann, ThomasThomasHoffmannAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemansThomas, Shawn G.Shawn G.Thomas2021-10-172021-10-172008-060741-3106https://imec-publications.be/handle/20.500.12860/14746Strain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition processJournal article