Li, ZilanZilanLiSchram, TomTomSchramStesmans, AndreAndreStesmansFranquet, AlexisAlexisFranquetWitters, ThomasThomasWittersPantisano, LuigiLuigiPantisanoYamada, NaokiNaokiYamadaTsunoda, TakaakiTakaakiTsunodaHooker, JacobJacobHookerDe Gendt, StefanStefanDe GendtDe Meyer, KristinKristinDe Meyer2021-10-172021-10-1720080003-6951https://imec-publications.be/handle/20.500.12860/14033Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacksJournal article