Channel length influence on the low-frequency noise of strained 45o rotated triple gate SOI nFinFETs

de Souza, M.A.S.M.A.S.de SouzaDoria, R.T.R.T.DoriaMartino, JoaoJoaoMartinoSimoen, EddyEddySimoenClaeys, CorCorClaeysPavanello, MarceloMarceloPavanello2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/23726Channel length influence on the low-frequency noise of strained 45o rotated triple gate SOI nFinFETsProceedings paper