Cryogenic etching vs P4 approaches: paths towards ultra-low damage integration of mesoporous oxide dielectric materials

de Marneffe, Jean-FrancoisJean-Francoisde MarneffeZhang, LipingLipingZhangHeyne, MarkusMarkusHeyneKrishtab, MikhailMikhailKrishtabGoodyear, AndyAndyGoodyearCooke, MikeMikeCookeHeylen, NancyNancyHeylenCiofi, IvanIvanCiofiWen, Liang GongLiang GongWenWilson, ChrisChrisWilsonRutigliani, VitoVitoRutiglianiDecoster, StefanStefanDecosterSavage, TravisTravisSavageMatsunaga, KoichiKoichiMatsunagaNafus, KathleenKathleenNafusBoemmels, JuergenJuergenBoemmelsTokei, ZsoltZsoltTokeiBaklanov, MikhaïlMikhaïlBaklanov2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/23708Cryogenic etching vs P4 approaches: paths towards ultra-low damage integration of mesoporous oxide dielectric materialsMeeting abstract