Kerber, AndreasAndreasKerberCartier, EduardEduardCartierPantisano, LuigiLuigiPantisanoDegraeve, RobinRobinDegraeveGroeseneken, GuidoGuidoGroesenekenMaes, HermanHermanMaesSchwalke, U.U.Schwalke2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6472Charging instability in n-channel MOSFETs with SiO2/HfO2 gate dielectricsOral presentation