Scalability of InGaAs nanowires demonstrating wire width down to 7nm and Lg down to 30nm fabricated on a 300mm Si platform

Zhou, DaisyDaisyZhouWaldron, NiamhNiamhWaldronBoccardi, GuillaumeGuillaumeBoccardiSebaai, FaridFaridSebaaiMerckling, ClementClementMercklingEneman, GeertGeertEnemanSioncke, SonjaSonjaSionckeNyns, LauraLauraNynsOpdebeeck, AnnAnnOpdebeeckMaes, JanJanMaesXie, QiQiXieGivens, MMGivensTang, FFTangJiang, XXJiangGuo, WeimingWeimingGuoKunert, BernardetteBernardetteKunertTeugels, LieveLieveTeugelsDevriendt, KatiaKatiaDevriendtSibaja-Hernandez, ArturoArturoSibaja-HernandezFranco, JacopoJacopoFrancovan Dorp, DennisDennisvan DorpBarla, KathyKathyBarlaCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27674Scalability of InGaAs nanowires demonstrating wire width down to 7nm and Lg down to 30nm fabricated on a 300mm Si platformProceedings paper