Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes

Gramenova, EmiliaEmiliaGramenovaJansen, PhilippePhilippeJansenSimoen, EddyEddySimoenVanhellemont, JanJanVanhellemontDupas, LucLucDupasDeferm, LudoLudoDeferm2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3470Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodesJournal article