Selective growth of strained Ge on relaxed SiGe in shallow trench isolation for p-MOS FINFET

Sun, JianwuJianwuSunLoo, RogerRogerLooWitters, LiesbethLiesbethWittersHikavyy, AndriyAndriyHikavyyShimura, YosukeYosukeShimuraFavia, PaolaPaolaFaviaRichard, OlivierOlivierRichardBender, HugoHugoBenderVandervorst, WilfriedWilfriedVandervorstCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24575Selective growth of strained Ge on relaxed SiGe in shallow trench isolation for p-MOS FINFETMeeting abstracthttp://www.emrs-strasbourg.com/index.php?option=com_abstract&task=view&id=276&day=2014-09-16&year=2014&Itemid=99999999&id_season