Unexpected failure during HBM ESD stress in nanometer-scale nLDMOS-SCR devices

Chen, Shih-HungShih-HungChenThijs, StevenStevenThijsGriffoni, AlessioAlessioGriffoniLinten, DimitriDimitriLintenDe Keersgieter, AnAnDe KeersgieterGroeseneken, GuidoGuidoGroeseneken2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/18664Unexpected failure during HBM ESD stress in nanometer-scale nLDMOS-SCR devicesProceedings paper