Characterization of bonding activation sequences to enable ultra-low Cu/SiCN wafer level hybrid bonding

Iacovo, SerenaSerenaIacovoPeng, LanLanPengNagano, FuyaFuyaNaganoUhrmann, ThomasThomasUhrmannBurggraf, JurgenJurgenBurggrafFehkuhrer, AndreasAndreasFehkuhrerConard, ThierryThierryConardInoue, FumihiroFumihiroInoueKim, Soon-WookSoon-WookKimDe Vos, JoeriJoeriDe VosPhommahaxay, AlainAlainPhommahaxayBeyne, EricEricBeyne2022-04-252021-11-022022-04-012022-04-2520210569-5503WOS:000702282700317https://imec-publications.be/handle/20.500.12860/37432Characterization of bonding activation sequences to enable ultra-low Cu/SiCN wafer level hybrid bondingProceedings paper10.1109/ECTC32696.2021.00330978-0-7381-4523-5WOS:000702282700317SURFACE