Wear-out of ultra-thin gate oxides during high-field electron tunnelling

Depas, MichelMichelDepasVermeire, BertBertVermeireMertens, PaulPaulMertensMeuris, MarcMarcMeurisHeyns, MarcMarcHeyns2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/623Wear-out of ultra-thin gate oxides during high-field electron tunnellingJournal article