Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs for low voltage logic

Pandey, RRPandeySchulte-Braucks, ChristianChristianSchulte-BraucksSajjad, R.N.R.N.SajjadBarth, M.M.BarthGhosh, RRGhoshGrisafe, B.B.GrisafeSharma, P.P.Sharmavon den Driesch, NielsNielsvon den DrieschVohra, AnuragAnuragVohraRayner, R.R.RaynerLoo, RogerRogerLooMantl, SiegfriedSiegfriedMantlBuca, DanDanBucaYeh, C.C.C.C.YehWu, C-H.C-H.WuTsai, WilmanWilmanTsaiAntoniadis, A.A.AntoniadisDatta, SumanSumanDatta2021-10-232021-10-232016-12https://imec-publications.be/handle/20.500.12860/27118Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs for low voltage logicProceedings paper