Thermal stability and relaxation mechanisms in compressively-strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

Fleischmann, ClaudiaClaudiaFleischmannLieten, RubenRubenLietenHermann, PeterPeterHermannHoenicke, PhilippPhilippHoenickeBeckhoff, BurkhardBurkhardBeckhoffSeidel, FelixFelixSeidelDouhard, BastienBastienDouhardRichard, OlivierOlivierRichardBender, HugoHugoBenderShimura, YosukeYosukeShimuraZaima, SSZaimaUchida, NoriNoriUchidaTemst, KristiaanKristiaanTemstVandervorst, WilfriedWilfriedVandervorstVantomme, AndreAndreVantomme2021-10-232021-10-2320160021-8979https://imec-publications.be/handle/20.500.12860/26624Thermal stability and relaxation mechanisms in compressively-strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxyJournal articlehttp://scitation.aip.org/content/aip/journal/jap/120/8/10.1063/1.4961396