Put, SofieSofiePutSimoen, EddyEddySimoenCollaert, NadineNadineCollaertDe Keersgieter, AnAnDe KeersgieterClaeys, CorCorClaeysVan Uffelen, MarcoMarcoVan UffelenLeroux, PaulPaulLeroux2021-10-182021-10-1820100018-9499https://imec-publications.be/handle/20.500.12860/17859Influence of back-gate bias and process conditions on the gamma degradation of the transconductance of MuGFETsJournal article