Arutchelvan, GouthamGouthamArutchelvanSmets, QuentinQuentinSmetsVerreck, DevinDevinVerreckAhmed, ZubairZubairAhmedGaur, AbhinavAbhinavGaurSutar, SurajitSurajitSutarJussot, JulienJulienJussotGroven, BenjaminBenjaminGrovenHeyns, MarcMarcHeynsLin, DennisDennisLinAsselberghs, IngeIngeAsselberghsRadu, IulianaIulianaRadu2022-02-242022-02-2420212045-2322WOS:000634964500024https://imec-publications.be/handle/20.500.12860/39127Impact of device scaling on the electrical properties of MoS2 field-effect transistorsJournal article10.1038/s41598-021-85968-yWOS:000634964500024MEDLINE:33758215