Excess carrier lifetime and surface recombination velocity in dielectrically isolated Si-tubes

Meynants, GuyGuyMeynantsPoortmans, JefJefPoortmansMertens, RobertRobertMertensJones, S.S.JonesPolce, N.N.PolceBlackstone, S.S.Blackstone2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/2769Excess carrier lifetime and surface recombination velocity in dielectrically isolated Si-tubesProceedings paper