Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Vincent, BenjaminBenjaminVincentShimura, Y.Y.ShimuraTakeuchi, S.S.TakeuchiNishimura, T.T.NishimuraDemeulemeester, J.J.DemeulemeesterEneman, GeertGeertEnemanClarysse, TrudoTrudoClarysseVantomme, AndreAndreVantommeNakatsuka, O.O.NakatsukaZaima, S.S.ZaimaDekoster, JohanJohanDekosterCaymax, MattyMattyCaymaxLoo, RogerRogerLoo2021-10-192021-10-192010https://imec-publications.be/handle/20.500.12860/18304Characterization of GeSn materials for future Ge pMOSFETs source/drain stressorsMeeting abstract