The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography (vol 266,114034,2024)

Guerguis, BavleyBavleyGuerguisCuduvally, RamyaRamyaCuduvallyMorris, Richard J. H.Richard J. H.MorrisArcuri, GabrielGabrielArcuriLangelier, BrianBrianLangelierBassim, NabilNabilBassim2025-04-012025-04-012025-MAY0304-3991WOS:001454028200001https://imec-publications.be/handle/20.500.12860/45474The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography (vol 266,114034,2024)Journal article correction10.1016/j.ultramic.2025.114115WOS:001454028200001MEDLINE:39934067