Houssa, MichelMichelHoussaScarrozza, MarcoMarcoScarrozzaPourtois, GeoffreyGeoffreyPourtoisAfanas'ev, ValeryValeryAfanas'evStesmans, AndreAndreStesmans2021-10-192021-10-1920110003-6951https://imec-publications.be/handle/20.500.12860/19091Universal stress-defect correlation at (100)semiconductor/oxide interfacesJournal article