MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow

Pantisano, LuigiLuigiPantisanoConard, ThierryThierryConardClaes, MartineMartineClaesDemand, MarcMarcDemandDeweerd, WimWimDeweerdDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsHoussa, MichelMichelHoussaAoulaiche, MarcMarcAoulaicheLujan, GuilhermeGuilhermeLujanRagnarsson, Lars-AkeLars-AkeRagnarssonRohr, ErikaErikaRohrSchram, TomTomSchramHooker, JacobJacobHookerRittersma, ChrisChrisRittersmaFompereyne, JeanJeanFompereyneLocquet, Jean-PierreJean-PierreLocquetdimoulas, A.A.dimoulas2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10978MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flowOral presentation