Low Dark Current and High Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

Ozdemir, Cenk IbrahimCenk IbrahimOzdemirDe Koninck, YannickYannickDe KoninckYudistira, DiditDiditYudistiraKuznetsova, NadezdaNadezdaKuznetsovaBaryshnikova, MarinaMarinaBaryshnikovaVan Thourhout, DriesDriesVan ThourhoutKunert, BernardetteBernardetteKunertPantouvaki, MariannaMariannaPantouvakiVan Campenhout, JorisJorisVan Campenhout2022-02-232022-02-2320210733-8724WOS:000692209800011https://imec-publications.be/handle/20.500.12860/39083Low Dark Current and High Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si WaferJournal article10.1109/JLT.2021.3084324WOS:000692209800011I-N PHOTODETECTORIII-VGAAS