LaSiOx- and Al2O3-Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration

Wu, ZhichengZhichengWuFranco, JacopoJacopoFrancoVandooren, AnneAnneVandoorenArimura, HiroakiHiroakiArimuraRagnarsson, Lars-AkeLars-AkeRagnarssonRoussel, PhilippePhilippeRousselKaczer, BenBenKaczerLinten, DimitriDimitriLintenCollaert, NadineNadineCollaertGroeseneken, GuidoGuidoGroeseneken2023-08-112023-06-202023-08-1120220018-9383WOS:000750221700001https://imec-publications.be/handle/20.500.12860/41920LaSiOx- and Al2O3-Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential IntegrationJournal article10.1109/TED.2022.3141983WOS:000750221700001DEVICES