Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes

Simoen, EddyEddySimoenDubuc, Jean-PaulJean-PaulDubucVanhellemont, JanJanVanhellemontClaeys, CorCorClaeys2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1490Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodesJournal article