On the impact of defects close to the gate electrode on the low-frequency 1/f noise

Magnone, PaoloPaoloMagnonePantisano, LuigiLuigiPantisanoCrupi, FeliceFeliceCrupiTrojman, LionelLionelTrojmanPace, CalogeroCalogeroPaceGiusi, GinoGinoGiusi2021-10-172021-10-172008-09https://imec-publications.be/handle/20.500.12860/14100On the impact of defects close to the gate electrode on the low-frequency 1/f noiseJournal article